IMZC120R022M2HXKSA1
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IMZC120R022M2HXKSA1
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R022M2HXKSA1

DigiKey Part Number
448-IMZC120R022M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZC120R022M2HXKSA1
Description
SICFET N-CH 1200V 80A TO247
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 80A (Tc) 329W (Tc) Through Hole PG-TO247-4-17
Datasheet
 Datasheet
EDA/CAD Models
IMZC120R022M2HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
22mOhm @ 32A, 18V
Vgs(th) (Max) @ Id
5.1V @ 10.1mA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2330 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
329W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-17
Package / Case
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In-Stock: 45
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
15 162,85000 Ft5 162,85 Ft
303 177,72300 Ft95 331,69 Ft
1202 814,64725 Ft337 757,67 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5 162,85000 Ft
Unit Price with VAT:6 556,81950 Ft