IMZC120R022M2HXKSA1
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IMZC120R022M2HXKSA1
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R078M2HXKSA1

DigiKey Part Number
448-IMZC120R078M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZC120R078M2HXKSA1
Description
SICFET N-CH 1200V 28A TO247
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 28A (Tc) 143W (Tc) Through Hole PG-TO247-4-17
Datasheet
 Datasheet
EDA/CAD Models
IMZC120R078M2HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
78mOhm @ 9A, 18V
Vgs(th) (Max) @ Id
5.1V @ 2.8mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
143W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-17
Package / Case
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In-Stock: 90
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
12 698,76000 Ft2 698,76 Ft
301 570,98167 Ft47 129,45 Ft
1201 323,53908 Ft158 824,69 Ft
5101 205,85480 Ft614 985,95 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2 698,76000 Ft
Unit Price with VAT:3 427,42520 Ft