N-Channel 1200 V 129A (Tc) 480W (Tc) Through Hole PG-TO247-4-17
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 1200 V 129A (Tc) 480W (Tc) Through Hole PG-TO247-4-17
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R012M2HXKSA1

DigiKey Part Number
448-IMZC120R012M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZC120R012M2HXKSA1
Description
SICFET N-CH 1200V 129A TO247
Manufacturer Standard Lead Time
69 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 129A (Tc) 480W (Tc) Through Hole PG-TO247-4-17
Datasheet
 Datasheet
EDA/CAD Models
IMZC120R012M2HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
12mOhm @ 57A, 18V
Vgs(th) (Max) @ Id
5.1V @ 17.8mA
Gate Charge (Qg) (Max) @ Vgs
124 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
4050 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
480W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-17
Package / Case
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 261
Check for Additional Incoming Stock
All prices are in HUF
Tube
QuantityUnit PriceExt Price
18 894,42000 Ft8 894,42 Ft
305 697,81733 Ft170 934,52 Ft
1204 999,03367 Ft599 884,04 Ft
5104 984,40643 Ft2 542 047,28 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:8 894,42000 Ft
Unit Price with VAT:11 295,91340 Ft