IMZC120R022M2HXKSA1
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IMZC120R022M2HXKSA1
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R040M2HXKSA1

DigiKey Part Number
448-IMZC120R040M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZC120R040M2HXKSA1
Description
SICFET N-CH 1200V 48A TO247
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 48A (Tc) 218W (Tc) Through Hole PG-TO247-4-17
Datasheet
 Datasheet
EDA/CAD Models
IMZC120R040M2HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
40mOhm @ 18A, 18V
Vgs(th) (Max) @ Id
5.1V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1310 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
218W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-17
Package / Case
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In-Stock: 254
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 563,71000 Ft3 563,71 Ft
302 125,03800 Ft63 751,14 Ft
1201 809,42808 Ft217 131,37 Ft
5101 739,61225 Ft887 202,25 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 563,71000 Ft
Unit Price with VAT:4 525,91170 Ft