IMZC120R022M2HXKSA1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMZC120R022M2HXKSA1
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMZC120R034M2HXKSA1

DigiKey Part Number
448-IMZC120R034M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZC120R034M2HXKSA1
Description
SICFET N-CH 1200V 55A TO247
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 55A (Tc) 244W (Tc) Through Hole PG-TO247-4-17
Datasheet
 Datasheet
EDA/CAD Models
IMZC120R034M2HXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
34mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5.1V @ 6.4mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1510 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
244W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-17
Package / Case
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

0 In Stock
Check Lead Time
Request Stock Notification
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 751,45000 Ft3 751,45 Ft
302 246,39867 Ft67 391,96 Ft
1201 916,40075 Ft229 968,09 Ft
5101 859,88155 Ft948 539,59 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 751,45000 Ft
Unit Price with VAT:4 764,34150 Ft