IMZA120R020M1HXKSA1
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IMZA65R020M2HXKSA1

DigiKey Part Number
448-IMZA65R020M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R020M2HXKSA1
Description
SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 83A (Tc) 273W (Tc) Through Hole PG-TO247-4-8
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
18mOhm @ 46.9A, 20V
Vgs(th) (Max) @ Id
5.6V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2038 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
273W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-8
Package / Case
Base Product Number
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
14 767,26000 Ft4 767,26 Ft
302 913,99300 Ft87 419,79 Ft
1202 539,29525 Ft304 715,43 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 767,26000 Ft
Unit Price with VAT:6 054,42020 Ft