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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMW65R050M2HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMW65R050M2HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMW65R050M2HXKSA1 |
Description | SILICON CARBIDE MOSFET |
Manufacturer Standard Lead Time | 61 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-3-40 |
Datasheet | Datasheet |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V | |
Rds On (Max) @ Id, Vgs | 46mOhm @ 18.2A, 20V | |
Vgs(th) (Max) @ Id | 5.6V @ 3.7mA | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 18 V | |
Vgs (Max) | +23V, -7V | |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 153W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-3-40 | |
Package / Case | ||
Base Product Number |
In-Stock: 700
Check for Additional Incoming Stock
Quantity
All prices are in HUF
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | 2 762,18000 Ft | 2 762,18 Ft |
| 30 | 1 608,98933 Ft | 48 269,68 Ft |
| 120 | 1 355,39983 Ft | 162 647,98 Ft |
| 510 | 1 197,18043 Ft | 610 562,02 Ft |
| Unit Price without VAT: | 2 762,18000 Ft |
|---|---|
| Unit Price with VAT: | 3 507,96860 Ft |
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