N-Channel 650 V 47A (Tc) 189W (Tc) Through Hole PG-TO247-3-41
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IMW65R027M1HXKSA1

DigiKey Part Number
448-IMW65R027M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R027M1HXKSA1
Description
MOSFET 650V NCH SIC TRENCH
Customer Reference
Detailed Description
N-Channel 650 V 47A (Tc) 189W (Tc) Through Hole PG-TO247-3-41
Datasheet
 Datasheet
EDA/CAD Models
IMW65R027M1HXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
5.7V @ 11mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 18 V
Series
Vgs (Max)
+23V, -5V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2131 pF @ 400 V
Part Status
Not For New Designs
Power Dissipation (Max)
189W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-3-41
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
18V
Base Product Number
Rds On (Max) @ Id, Vgs
34mOhm @ 38.3A, 18V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (3)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
MSC015SMA070BMicrochip Technology191691-MSC015SMA070B-ND5 497,21000 FtSimilar
TSM60NE048PW C0GTaiwan Semiconductor Corporation3001801-TSM60NE048PWC0G-ND4 774,70000 FtSimilar
TSM60NE069PW C0GTaiwan Semiconductor Corporation2951801-TSM60NE069PWC0G-ND3 769,34000 FtSimilar
In-Stock: 480
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
15 198,98000 Ft5 198,98 Ft
303 156,38433 Ft94 691,53 Ft
1202 708,91633 Ft325 069,96 Ft
5102 381,35096 Ft1 214 488,99 Ft
1 0202 261,94883 Ft2 307 187,81 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5 198,98000 Ft
Unit Price with VAT:6 602,70460 Ft