Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
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2N5551BU

DigiKey Part Number
2N5551BU-ND
Manufacturer
Manufacturer Product Number
2N5551BU
Description
TRANS NPN 160V 0.6A TO-92-3
Manufacturer Standard Lead Time
33 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
Datasheet
 Datasheet
EDA/CAD Models
2N5551BU Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
100MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Base Product Number
Product Questions and Answers

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In-Stock: 337 551
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All prices are in HUF
Bulk
QuantityUnit PriceExt Price
186,09000 Ft86,09 Ft
1052,88100 Ft528,81 Ft
10032,89720 Ft3 289,72 Ft
50024,22706 Ft12 113,53 Ft
1 00021,42004 Ft21 420,04 Ft
2 00019,04653 Ft38 093,06 Ft
5 00016,47256 Ft82 362,80 Ft
10 00014,87843 Ft148 784,30 Ft
50 00012,08401 Ft604 200,50 Ft
Manufacturers Standard Package
Unit Price without VAT:86,09000 Ft
Unit Price with VAT:109,33430 Ft