Image of ROHM Silicon Carbide Barrier Diode

Silicon Carbide (SiC) Barrier Diodes

ROHM Semiconductor

This presentation will introduce the benefits of Silicon (Si) devices. Additionally, it will help the user understand the unique characteristics of Silicon Carbide and discover how these qualities can benefit existing solutions.

Related Parts

ImageManufacturer Part NumberDescriptionVoltage - DC Reverse (Vr) (Max)Available QuantityPriceView Details
DIODE ARRAY SIC 650V 20A TO-247SCS210KE2HRCDIODE ARRAY SIC 650V 20A TO-247650 V0 - Immediate$2,225.22View Details
DIODE ARRAY SIC 650V 10A TO-247SCS220AE2CDIODE ARRAY SIC 650V 10A TO-247650 V0 - Immediate$1,751.68View Details
DIODE ARRAY SIC 650V 10A TO-247SCS220AE2HRCDIODE ARRAY SIC 650V 10A TO-247650 V0 - Immediate$2,070.17View Details
DIODE ARRAY SIC 1200V 10A TO-247SCS220KE2CDIODE ARRAY SIC 1200V 10A TO-2471200 V0 - Immediate$3,474.03View Details
DIODE ARRAY SIC 650V 10A TO-247SCS220KE2HRCDIODE ARRAY SIC 650V 10A TO-247650 V0 - Immediate$3,855.38View Details
DIODE ARRAY SIC 650V 15A TO-247SCS230AE2CDIODE ARRAY SIC 650V 15A TO-247650 V0 - Immediate$2,594.00View Details
DIODE ARRAY SIC 650V 15A TO-247SCS230AE2HRCDIODE ARRAY SIC 650V 15A TO-247650 V0 - Immediate$2,304.84View Details
DIODE ARRAY SIC 1200V 15A TO-247SCS230KE2CDIODE ARRAY SIC 1200V 15A TO-2471200 V0 - Immediate$5,196.38View Details
DIODE ARRAY SIC 650V 20A TO-247SCS240AE2CDIODE ARRAY SIC 650V 20A TO-247650 V0 - Immediate$3,277.07View Details
DIODE ARRAY SIC 650V 15A TO-247SCS240AE2HRCDIODE ARRAY SIC 650V 15A TO-247650 V0 - Immediate$3,603.94View Details
PTM Published on: 2018-08-28

Related Videos

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

Silicon Carbide (SiC) Business
Silicon Carbide (SiC) Business

Publish Date: 2023-02-06

4th Gen SiC MOSFETs
4th Gen SiC MOSFETs

Publish Date: 2023-02-06

Related Product Highlight

SiC Schottky Barrier Diodes ROHM’s SiC Schottky barrier diodes are AEC-Q101 qualified for automotive use.
AEC-Q101 Silicon Carbide (SiC) Schottky Barrier Diodes ROHM Semiconductor's AEC-Q101 silicon carbide (SiC) Schottky barrier diodes are ideal for a variety of automotive applications.
Silicon Carbide Diodes ROHM Semiconductor's SCS1xxAGC series maintains low forward voltage over a wide operating temperature range.

Related Articles and Blogs

Wide Bandgap Semiconductors Are Reshaping the Transportation World The entire transportation sector is undergoing a radical transformation with solutions for electric and hybrid cars and cleaner mass transportation.
Wide Band Gap Semiconductors in Aerospace and Satellite Applications Wide Band Gap semiconductors bring several advantages in power conversion, such as increased power density and efficiency, and reducing system size and weight.
Use SiC and GaN Power Components to Address EV Design Requirements Make the most of the higher operating temperatures and switching frequencies of SiC and GaN wide bandgap components for electric vehicle (EV) power systems.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.