C2D10120D
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C3M0120065D

DigiKey Part Number
1697-C3M0120065D-ND
Manufacturer
Manufacturer Product Number
C3M0120065D
Description
650V 120M SIC MOSFET
Customer Reference
Detailed Description
N-Channel 650 V 22A (Tc) 98W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
EDA/CAD Models
C3M0120065D Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id
3.6V @ 1.86mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V
Vgs (Max)
+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
98W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
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In-Stock: 485
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This product is no longer manufactured and will no longer be stocked once stock is depleted. View Substitutes
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 164,76000 Ft3 164,76 Ft
102 459,05900 Ft24 590,59 Ft
302 253,21533 Ft67 596,46 Ft
1202 069,35858 Ft248 323,03 Ft
2701 990,68967 Ft537 486,21 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 164,76000 Ft
Unit Price with VAT:4 019,24520 Ft