
SQP120N10-09_GE3 | |
|---|---|
DigiKey Part Number | SQP120N10-09_GE3-ND |
Manufacturer | |
Manufacturer Product Number | SQP120N10-09_GE3 |
Description | MOSFET N-CH 100V 120A TO220AB |
Customer Reference | |
Detailed Description | N-Channel 100 V 120A (Tc) 375W (Tc) Through Hole TO-220AB |
Datasheet | Datasheet |
EDA/CAD Models | SQP120N10-09_GE3 Models |
Category | Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V |
Mfr | Vgs (Max) ±20V |
Series | Input Capacitance (Ciss) (Max) @ Vds 8645 pF @ 25 V |
Packaging Tube | Power Dissipation (Max) 375W (Tc) |
Part Status Obsolete | Operating Temperature -55°C ~ 175°C (TJ) |
FET Type | Grade Automotive |
Technology | Qualification AEC-Q101 |
Drain to Source Voltage (Vdss) 100 V | Mounting Type Through Hole |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-220AB |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
Rds On (Max) @ Id, Vgs 9.5mOhm @ 30A, 10V | Base Product Number |
Vgs(th) (Max) @ Id 3.5V @ 250µA |
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| AOT288L | Alpha & Omega Semiconductor Inc. | 0 | AOT288L-ND | 292,99678 Ft | Similar |
| FDP085N10A-F102 | onsemi | 0 | FDP085N10A-F102-ND | 1 103,75000 Ft | Similar |
| IPP083N10N5AKSA1 | Infineon Technologies | 0 | IPP083N10N5AKSA1-ND | 278,16846 Ft | Similar |
| IRFB4410ZPBF | Infineon Technologies | 3 612 | 448-IRFB4410ZPBF-ND | 700,99000 Ft | Similar |
| TK34E10N1,S1X | Toshiba Semiconductor and Storage | 20 | TK34E10N1S1X-ND | 820,89000 Ft | Similar |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | 1 205,20000 Ft | 1 205,20 Ft |
| 50 | 613,36280 Ft | 30 668,14 Ft |
| 100 | 555,90030 Ft | 55 590,03 Ft |
| Unit Price without VAT: | 1 205,20000 Ft |
|---|---|
| Unit Price with VAT: | 1 530,60400 Ft |

