N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AD
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SIHW61N65EF-GE3

DigiKey Part Number
SIHW61N65EF-GE3-ND
Manufacturer
Manufacturer Product Number
SIHW61N65EF-GE3
Description
MOSFET N-CH 650V 64A TO247AD
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AD
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
371 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
7407 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
Base Product Number
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In-Stock: 480
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Tube
QuantityUnit PriceExt Price
14 845,41000 Ft4 845,41 Ft
103 409,31300 Ft34 093,13 Ft
4802 344,30625 Ft1 125 267,00 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 845,41000 Ft
Unit Price with VAT:6 153,67070 Ft