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N-Channel 650 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP21N65EF-GE3

DigiKey Part Number
SIHP21N65EF-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP21N65EF-GE3
Description
MOSFET N-CH 650V 21A TO220AB
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2322 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
Product Questions and Answers

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All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 817,03000 Ft1 817,03 Ft
101 211,96800 Ft12 119,68 Ft
100868,91520 Ft86 891,52 Ft
500722,61204 Ft361 306,02 Ft
1 000675,65519 Ft675 655,19 Ft
2 000643,33913 Ft1 286 678,26 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 817,03000 Ft
Unit Price with VAT:2 307,62810 Ft