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N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP12N65E-GE3

DigiKey Part Number
SIHP12N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP12N65E-GE3
Description
MOSFET N-CH 650V 12A TO220AB
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP12N65E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
Product Questions and Answers

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All prices are in HUF
Tube
QuantityUnit PriceExt Price
1953,10000 Ft953,10 Ft
10617,97500 Ft6 179,75 Ft
100427,90890 Ft42 790,89 Ft
500346,63758 Ft173 318,79 Ft
1 000320,52277 Ft320 522,77 Ft
2 000298,56623 Ft597 132,46 Ft
5 000293,99906 Ft1 469 995,30 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:953,10000 Ft
Unit Price with VAT:1 210,43700 Ft