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SIHG21N80AE-GE3

DigiKey Part Number
SIHG21N80AE-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHG21N80AE-GE3
Description
MOSFET N-CH 800V 17.4A TO247AC
Manufacturer Standard Lead Time
25 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-247AC
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
E
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1388 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG21
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In-Stock: 460
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 887,46000 Ft1 887,46 Ft
251 094,25600 Ft27 356,40 Ft
100904,73920 Ft90 473,92 Ft
500753,07878 Ft376 539,39 Ft
1 000719,94938 Ft719 949,38 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 887,46000 Ft
Unit Price with VAT:2 397,07420 Ft