N-Channel 650 V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHF12N65E-GE3

DigiKey Part Number
SIHF12N65E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHF12N65E-GE3
Description
MOSFET N-CH 650V 12A TO220
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHF12
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 870
Check for Additional Incoming Stock
Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 076,08000 Ft1 076,08 Ft
50538,83680 Ft26 941,84 Ft
100486,69340 Ft48 669,34 Ft
500395,24542 Ft197 622,71 Ft
1 000365,86243 Ft365 862,43 Ft
2 000341,16497 Ft682 329,94 Ft
5 000317,05781 Ft1 585 289,05 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 076,08000 Ft
Unit Price with VAT:1 366,62160 Ft