Name: SIHD180N60E-GE3
Brand: Vishay Siliconix
SKU: SIHD180N60E-GE3-ND
Price: 1612.6079 HUF
Availability: InStock

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SIHD180N60E-GE3
DigiKey Part Number	SIHD180N60E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHD180N60E-GE3
Description	MOSFET N-CH 600V 19A TO252AA
Manufacturer Standard Lead Time	15 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 19A (Tc) 156W (Tc) Surface Mount DPAK
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 100 V
Part Status Active	Power Dissipation (Max) 156W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package DPAK
Current - Continuous Drain (Id) @ 25°C 19A (Tc)	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHD180
Rds On (Max) @ Id, Vgs 195mOhm @ 9.5A, 10V

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Substitutes (1)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
TSM60NE285CP ROG	Taiwan Semiconductor Corporation	4 975	1801-TSM60NE285CPROGCT-ND	1 223,65000 Ft	Similar

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Unit Price without VAT:	1 269,77000 Ft
Unit Price with VAT:	1 612,60790 Ft

SIHD180N60E-GE3