N-Channel 650 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
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SIHB21N65EF-GE3

DigiKey Part Number
SIHB21N65EF-GE3-ND
Manufacturer
Manufacturer Product Number
SIHB21N65EF-GE3
Description
MOSFET N-CH 650V 21A D2PAK
Manufacturer Standard Lead Time
28 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2322 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
Base Product Number
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Tube
QuantityUnit PriceExt Price
11 940,01000 Ft1 940,01 Ft
501 022,39420 Ft51 119,71 Ft
100933,91010 Ft93 391,01 Ft
500778,94918 Ft389 474,59 Ft
1 000729,20069 Ft729 200,69 Ft
2 000701,75463 Ft1 403 509,26 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 940,01000 Ft
Unit Price with VAT:2 463,81270 Ft