TO-263-3
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TO-263-3
TO-263-3

SIHB100N60E-GE3

DigiKey Part Number
SIHB100N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB100N60E-GE3
Description
MOSFET N-CH 600V 30A D2PAK
Manufacturer Standard Lead Time
25 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
E
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1851 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB100
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In-Stock: 938
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 971,27000 Ft1 971,27 Ft
501 040,07960 Ft52 003,98 Ft
100949,99790 Ft94 999,79 Ft
500792,31644 Ft396 158,22 Ft
1 000763,53188 Ft763 531,88 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 971,27000 Ft
Unit Price with VAT:2 503,51290 Ft