N-Channel 1200 V 29A (Tc) 139W (Tc) Through Hole TO-247-3L
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MXP120A080FW-GE3

DigiKey Part Number
742-MXP120A080FW-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
MXP120A080FW-GE3
Description
SILICON CARBIDE MOSFET
Customer Reference
Detailed Description
N-Channel 1200 V 29A (Tc) 139W (Tc) Through Hole TO-247-3L
Datasheet
 Datasheet
EDA/CAD Models
MXP120A080FW-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
MaxSiC™
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2.69V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
47.3 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1156 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3L
Package / Case
TO-247-3
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In-Stock: 472
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This product is no longer manufactured and will no longer be stocked once stock is depleted.
Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 129,84000 Ft3 129,84 Ft
102 444,22800 Ft24 442,28 Ft
252 272,67040 Ft56 816,76 Ft
1002 083,98830 Ft208 398,83 Ft
2501 994,03460 Ft498 508,65 Ft
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 129,84000 Ft
Unit Price with VAT:3 974,89680 Ft