N-Channel 800 V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
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IRFBE20PBF

DigiKey Part Number
IRFBE20PBF-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
IRFBE20PBF
Description
MOSFET N-CH 800V 1.8A TO220AB
Manufacturer Standard Lead Time
64 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRFBE20PBF Models
Product Attributes
Type
Description
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Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFBE20
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In-Stock: 1 306
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 068,80000 Ft1 068,80 Ft
50533,33120 Ft26 666,56 Ft
100481,49440 Ft48 149,44 Ft
500390,60632 Ft195 303,16 Ft
1 000361,40470 Ft361 404,70 Ft
2 000336,85403 Ft673 708,06 Ft
5 000333,58250 Ft1 667 912,50 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 068,80000 Ft
Unit Price with VAT:1 357,37600 Ft