N-Channel 1200 V 20A (Tc) 107W (Tc) Through Hole TO-247
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N-Channel 1200 V 20A (Tc) 107W (Tc) Through Hole TO-247
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW140N120C,S1F

DigiKey Part Number
264-TW140N120CS1F-ND
Manufacturer
Manufacturer Product Number
TW140N120C,S1F
Description
G3 1200V SIC-MOSFET TO-247 140M
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 20A (Tc) 107W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5V @ 1mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 18 V
Packaging
Tube
Vgs (Max)
+25V, -10V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
691 pF @ 800 V
FET Type
Power Dissipation (Max)
107W (Tc)
Technology
Operating Temperature
175°C
Drain to Source Voltage (Vdss)
1200 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-247
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
Rds On (Max) @ Id, Vgs
182mOhm @ 10A, 18V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
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All prices are in HUF
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QuantityUnit PriceExt Price
14 574,86000 Ft4 574,86 Ft
302 785,08700 Ft83 552,61 Ft
1202 392,78083 Ft287 133,70 Ft
5102 176,36018 Ft1 109 943,69 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 574,86000 Ft
Unit Price with VAT:5 810,07220 Ft