TK125N60Z1,S1F
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TK125N60Z1,S1F
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW107N65C,S1F

DigiKey Part Number
264-TW107N65CS1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TW107N65C,S1F
Description
G3 650V SIC-MOSFET TO-247 107MO
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 20A (Tc) 76W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
145mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
76W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 30
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 979,42000 Ft3 979,42 Ft
302 394,46733 Ft71 834,02 Ft
1202 047,26000 Ft245 671,20 Ft
5102 008,14751 Ft1 024 155,23 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 979,42000 Ft
Unit Price with VAT:5 053,86340 Ft