TO-247-4
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TO-247-4
TO-247-4

TW083Z65C,S1F

DigiKey Part Number
264-TW083Z65C,S1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TW083Z65C,S1F
Description
G3 650V SIC-MOSFET TO-247-4L 83
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247-4L(X)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
118mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
873 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
111W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L(X)
Package / Case
TO-247-4
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In-Stock: 58
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
15 162,85000 Ft5 162,85 Ft
303 179,51100 Ft95 385,33 Ft
1202 816,51908 Ft337 982,29 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5 162,85000 Ft
Unit Price with VAT:6 556,81950 Ft