Name: TW083N65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW083N65CS1F-ND
Price: 7012.686 HUF
Availability: OutOfStock

N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247

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TW083N65C,S1F
DigiKey Part Number	264-TW083N65CS1F-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TW083N65C,S1F
Description	G3 650V SIC-MOSFET TO-247 83MOH
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 600µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V
Packaging Tube	Vgs (Max) +25V, -10V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 111W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature 175°C
Drain to Source Voltage (Vdss) 650 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 30A (Tc)	Supplier Device Package TO-247
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-3
Rds On (Max) @ Id, Vgs 113mOhm @ 15A, 18V