TK125N60Z1,S1F
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TK125N60Z1,S1F
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW083N65C,S1F

DigiKey Part Number
264-TW083N65CS1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TW083N65C,S1F
Description
G3 650V SIC-MOSFET TO-247 83MOH
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 30A (Tc) 111W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
113mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
873 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
111W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 112
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
15 457,87000 Ft5 457,87 Ft
303 377,19667 Ft101 315,90 Ft
1203 025,21217 Ft363 025,46 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5 457,87000 Ft
Unit Price with VAT:6 931,49490 Ft