TK125N60Z1,S1F
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TK125N60Z1,S1F
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW060N120C,S1F

DigiKey Part Number
264-TW060N120CS1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TW060N120C,S1F
Description
G3 1200V SIC-MOSFET TO-247 60MO
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 36A (Tc) 170W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
78mOhm @ 18A, 18V
Vgs(th) (Max) @ Id
5V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1530 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 39
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
17 697,34000 Ft7 697,34 Ft
304 908,84233 Ft147 265,27 Ft
1204 694,33817 Ft563 320,58 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:7 697,34000 Ft
Unit Price with VAT:9 775,62180 Ft