N-Channel 1200 V 40A (Tc) 182W (Tc) Through Hole TO-247
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N-Channel 1200 V 40A (Tc) 182W (Tc) Through Hole TO-247
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW045N120C,S1F

DigiKey Part Number
264-TW045N120CS1F-ND
Manufacturer
Manufacturer Product Number
TW045N120C,S1F
Description
G3 1200V SIC-MOSFET TO-247 45MO
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 40A (Tc) 182W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5V @ 6.7mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V
Packaging
Tube
Vgs (Max)
+25V, -10V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V
FET Type
Power Dissipation (Max)
182W (Tc)
Technology
Operating Temperature
175°C
Drain to Source Voltage (Vdss)
1200 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-247
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 18V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 1
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All prices are in HUF
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QuantityUnit PriceExt Price
19 583,22000 Ft9 583,22 Ft
306 224,42767 Ft186 732,83 Ft
1205 596,74292 Ft671 609,15 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:9 583,22000 Ft
Unit Price with VAT:12 170,68940 Ft