TO-247-4
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TO-247-4
TO-247-4

TW027Z65C,S1F

DigiKey Part Number
264-TW027Z65C,S1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TW027Z65C,S1F
Description
G3 650V SIC-MOSFET TO-247-4L 27
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 58A (Tc) 156W (Tc) Through Hole TO-247-4L(X)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
38mOhm @ 29A, 18V
Vgs(th) (Max) @ Id
5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2288 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L(X)
Package / Case
TO-247-4
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In-Stock: 64
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
18 629,34000 Ft8 629,34 Ft
305 558,33333 Ft166 750,00 Ft
1205 424,76408 Ft650 971,69 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:8 629,34000 Ft
Unit Price with VAT:10 959,26180 Ft