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TRS12E65F,S1Q

DigiKey Part Number
TRS12E65FS1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS12E65F,S1Q
Description
DIODE SIL CARB 650V 12A TO220-2L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 12A Through Hole TO-220-2L
EDA/CAD Models
TRS12E65F,S1Q Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
90 µA @ 650 V
Capacitance @ Vr, F
65pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS12E65
Product Questions and Answers

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Quantity
All prices are in USD
Tube
QuantityUnit PriceExt Price
13,61000 $3,61 $
501,82580 $91,29 $
1001,65300 $165,30 $
5001,35030 $675,15 $
1 0001,25305 $1 253,05 $
2 0001,22750 $2 455,00 $
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3,61000 $
Unit Price with VAT:4,58470 $