Name: TK8A65D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK8A65D(STA4QM)-ND
Price: 1304.1376 HUF
Availability: InStock

N-Channel 650 V 8A (Ta) 45W (Tc) Through Hole TO-220SIS

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TK8A65D(STA4,Q,M)
DigiKey Part Number	TK8A65D(STA4QM)-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK8A65D(STA4,Q,M)
Description	MOSFET N-CH 650V 8A TO220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 8A (Ta) 45W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK8A65D(STA4,Q,M) Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	840mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK8A65

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In-Stock: 17

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Quantity

All prices are in HUF

Bulk

Quantity	Unit Price	Ext Price
1	1 026,88000 Ft	1 026,88 Ft
50	512,21180 Ft	25 610,59 Ft
100	462,22030 Ft	46 222,03 Ft
500	374,57248 Ft	187 286,24 Ft
1 000	346,40699 Ft	346 406,99 Ft
2 000	322,73180 Ft	645 463,60 Ft
5 000	297,45788 Ft	1 487 289,40 Ft