Name: TK62N60X,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK62N60XS1F-ND
Price: 5701.03 HUF
Availability: OutOfStock

TK62N60X,S1F is out of stock and can be placed on backorder.

Available Substitutes:

Similar

onsemi

In Stock: 9

Unit Price: 5 032,10000 Ft

Similar

onsemi

In Stock: 282

Unit Price: 5 250,02000 Ft

Similar

Infineon Technologies

In Stock: 0

Unit Price: 4 747,14000 Ft

Similar

IXYS

In Stock: 0

Unit Price: 4 052,39033 Ft

Similar

Vishay Siliconix

In Stock: 481

Unit Price: 4 170,51000 Ft

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK62N60X,S1F
DigiKey Part Number	TK62N60XS1F-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK62N60X,S1F
Description	MOSFET N-CH 600V 61.8A TO247
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 61.8A (Ta) 400W (Tc) Through Hole TO-247
Datasheet	Datasheet
EDA/CAD Models	TK62N60X,S1F Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	3.5V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	400W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Base Product Number	TK62N60