TO-220-3
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TK190E65Z,S1X

DigiKey Part Number
264-TK190E65ZS1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK190E65Z,S1X
Description
650V DTMOS VI TO-220 190MOHM
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 15A (Ta) 130W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
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In-Stock: 80
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 441,58000 Ft1 441,58 Ft
50740,16500 Ft37 008,25 Ft
100672,34390 Ft67 234,39 Ft
500553,61174 Ft276 805,87 Ft
1 000521,31375 Ft521 313,75 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 441,58000 Ft
Unit Price with VAT:1 830,80660 Ft