TO-220-3
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TK10E60W,S1VX

DigiKey Part Number
TK10E60WS1VX-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK10E60W,S1VX
Description
MOSFET N-CH 600V 9.7A TO220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 9.7A (Ta) 100W (Tc) Through Hole TO-220
Datasheet
 Datasheet
EDA/CAD Models
TK10E60W,S1VX Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK10E60
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In-Stock: 70
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 545,50000 Ft1 545,50 Ft
50799,63840 Ft39 981,92 Ft
100727,42550 Ft72 742,55 Ft
500600,87528 Ft300 437,64 Ft
1 000573,69656 Ft573 696,56 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 545,50000 Ft
Unit Price with VAT:1 962,78500 Ft