Name: TK10A60W,S4VX
Brand: Toshiba Semiconductor and Storage
SKU: TK10A60WS4VX-ND
Price: 1558.3154 HUF
Availability: InStock

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TK10A60W,S4VX
DigiKey Part Number	TK10A60WS4VX-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK10A60W,S4VX
Description	MOSFET N-CH 600V 9.7A TO220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK10A60W,S4VX Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK10A60

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Tube