TK125N60Z1,S1F
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TK095N65Z5,S1F

DigiKey Part Number
264-TK095N65Z5S1F(S-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK095N65Z5,S1F
Description
650V DTMOS6-HIGH SPEED DIODE
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 29A (Ta) 230W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSVI
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
95mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2880 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 195
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
12 685,35000 Ft2 685,35 Ft
301 564,05300 Ft46 921,59 Ft
1201 317,50458 Ft158 100,55 Ft
5101 199,35359 Ft611 670,33 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2 685,35000 Ft
Unit Price with VAT:3 410,39450 Ft