TO-220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK090E65Z,S1X

DigiKey Part Number
264-TK090E65ZS1X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK090E65Z,S1X
Description
650V DTMOS VI TO-220 90MOHM
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 30A (Ta) 230W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
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In-Stock: 53
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
12 269,64000 Ft2 269,64 Ft
501 216,95760 Ft60 847,88 Ft
1001 115,24270 Ft111 524,27 Ft
500959,65312 Ft479 826,56 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2 269,64000 Ft
Unit Price with VAT:2 882,44280 Ft