TK125N60Z1,S1F
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TK042N65Z5,S1F

DigiKey Part Number
264-TK042N65Z5S1F(S-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK042N65Z5,S1F
Description
650V DTMOS6 HSD 42MOHM TO-247
Manufacturer Standard Lead Time
10 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 55A (Ta) 360W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSVI
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
42mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6280 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 3
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
14 639,86000 Ft4 639,86 Ft
302 829,17467 Ft84 875,24 Ft
1202 451,51567 Ft294 181,88 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 639,86000 Ft
Unit Price with VAT:5 892,62220 Ft