N-Channel 1200 V 33A (Tc) 290W (Tc) Through Hole HiP247™
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SCTW40N120G2VAG

DigiKey Part Number
497-SCTW40N120G2VAG-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCTW40N120G2VAG
Description
SICFET N-CH 1200V 33A HIP247
Manufacturer Standard Lead Time
21 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 33A (Tc) 290W (Tc) Through Hole HiP247™
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
290W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCTW40
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In-Stock: 332
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
15 508,99000 Ft5 508,99 Ft
303 416,85367 Ft102 505,61 Ft
1202 983,50133 Ft358 020,16 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5 508,99000 Ft
Unit Price with VAT:6 996,41730 Ft