TO-247-3 HiP
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SCT20N120

DigiKey Part Number
497-15170-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCT20N120
Description
SICFET N-CH 1200V 20A HIP247
Customer Reference
Detailed Description
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™
Datasheet
 Datasheet
EDA/CAD Models
SCT20N120 Models
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
-
Packaging
Tube
Part Status
Last Time Buy
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCT20
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In-Stock: 579
Check for Additional Incoming Stock
Once available stock of this product has been depleted, manufacturer standard package and lead time will apply. View Substitutes
Last Time Buy Date: 2026. 02. 15.
Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
14 106,81000 Ft4 106,81 Ft
302 459,28233 Ft73 778,47 Ft
1202 114,53350 Ft253 744,02 Ft
5102 043,06610 Ft1 041 963,71 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 106,81000 Ft
Unit Price with VAT:5 215,64870 Ft