N-Channel 900 V 110A (Tc) 625W (Tc) Through Hole TO-247-4
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SCT012W90G3-4AG

DigiKey Part Number
497-SCT012W90G3-4AG-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCT012W90G3-4AG
Description
AUTOMOTIVE-GRADE SILICON CARBIDE
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 900 V 110A (Tc) 625W (Tc) Through Hole TO-247-4
EDA/CAD Models
SCT012W90G3-4AG Models
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
15.8mOhm @ 60A, 18V
Vgs(th) (Max) @ Id
4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
138 nC @ 18 V
Vgs (Max)
+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds
3880 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
625W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 66
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
16 930,50000 Ft6 930,50 Ft
304 368,49733 Ft131 054,92 Ft
1203 954,97750 Ft474 597,30 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:6 930,50000 Ft
Unit Price with VAT:8 801,73500 Ft
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