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S3M0016120K

DigiKey Part Number
1655-S3M0016120K-ND
Manufacturer
Manufacturer Product Number
S3M0016120K
Description
MOSFETS SILICON CARBIDES 1200V 1
Manufacturer Standard Lead Time
12 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 120A (Tc) 732W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
23mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs
287 nC @ 18 V
Vgs (Max)
+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds
5251 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
732W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
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In-Stock: 300
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All prices are in HUF
Tube
QuantityUnit PriceExt Price
15 987,57000 Ft5 987,57 Ft
303 725,52167 Ft111 765,65 Ft
1203 277,18050 Ft393 261,66 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:5 987,57000 Ft
Unit Price with VAT:7 604,21390 Ft