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TO-247-4
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GP3T080A120H

DigiKey Part Number
1560-GP3T080A120H-ND
Manufacturer
SemiQ
Manufacturer Product Number
GP3T080A120H
Description
GEN3 1200V, 80M SIC MOSFET, TO-2
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 32A (Tc) 147W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SemiQ
Series
QSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1351 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 133
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
11 920,98000 Ft1 920,98 Ft
101 284,67800 Ft12 846,78 Ft
100923,07740 Ft92 307,74 Ft
500768,94952 Ft384 474,76 Ft
1 000737,55000 Ft737 550,00 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 920,98000 Ft
Unit Price with VAT:2 439,64460 Ft
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