N-Channel 1200 V 132A (Tc) 484W (Tc) Through Hole TO-247-4
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GP3T016A120H

DigiKey Part Number
1560-GP3T016A120H-ND
Manufacturer
SemiQ
Manufacturer Product Number
GP3T016A120H
Description
GEN3 1200V, 16M SIC MOSFET, TO-2
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 132A (Tc) 484W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
SemiQ
Series
QSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
132A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
23mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
6779 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
484W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 52
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
14 298,58000 Ft4 298,58 Ft
103 000,99000 Ft30 009,90 Ft
1002 268,32760 Ft226 832,76 Ft
5002 137,60000 Ft1 068 800,00 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 298,58000 Ft
Unit Price with VAT:5 459,19660 Ft