N-Channel 650 V 70A (Tc) 262W (Tc) Through Hole TO-247N
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 650 V 70A (Tc) 262W (Tc) Through Hole TO-247N
ROHM 4-pin SiC Power MOSFETs | Digi-Key Daily
ROHM's SiC Power and Gate Driver Solutions

SCT3030ALGC11

DigiKey Part Number
SCT3030ALGC11-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
SCT3030ALGC11
Description
SICFET N-CH 650V 70A TO247N
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 70A (Tc) 262W (Tc) Through Hole TO-247N
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Rohm Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id
5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs
104 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1526 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
262W (Tc)
Operating Temperature
175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3030
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 880
Check for Additional Incoming Stock
Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
19 080,22000 Ft9 080,22 Ft
307 028,76400 Ft210 862,92 Ft
1206 760,04075 Ft811 204,89 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:9 080,22000 Ft
Unit Price with VAT:11 531,87940 Ft