N-Channel 1200 V 10A (Tc) 85W (Tc) Through Hole TO-247N
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 1200 V 10A (Tc) 85W (Tc) Through Hole TO-247N
ROHM's SiC Power and Gate Driver Solutions

SCT2450KEHRC11

DigiKey Part Number
846-SCT2450KEHRC11-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
SCT2450KEHRC11
Description
1200V, 10A, THD, SILICON-CARBIDE
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 10A (Tc) 85W (Tc) Through Hole TO-247N
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Rohm Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id
4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
463 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT2450
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 312
Check for Additional Incoming Stock
Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
14 225,10000 Ft4 225,10 Ft
103 096,18000 Ft30 961,80 Ft
4502 511,70227 Ft1 130 266,02 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 225,10000 Ft
Unit Price with VAT:5 365,87700 Ft