N-Channel 1200 V 14A (Tc) 108W (Tc) Through Hole TO-247N
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N-Channel 1200 V 14A (Tc) 108W (Tc) Through Hole TO-247N
ROHM's SiC Power and Gate Driver Solutions

SCT2280KEGC11

DigiKey Part Number
846-SCT2280KEGC11-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
SCT2280KEGC11
Description
1200V, 14A, THD, SILICON-CARBIDE
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 14A (Tc) 108W (Tc) Through Hole TO-247N
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Rohm Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
364mOhm @ 4A, 18V
Vgs(th) (Max) @ Id
4V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
667 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
108W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT2280
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
14 809,60000 Ft4 809,60 Ft
103 377,74200 Ft33 777,42 Ft
4502 471,60000 Ft1 112 220,00 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:4 809,60000 Ft
Unit Price with VAT:6 108,19200 Ft