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R6076MNZ1C9 is Obsolete and no longer manufactured.
Available Substitutes:
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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
R6076MNZ1C9 | |
|---|---|
DigiKey Part Number | R6076MNZ1C9-ND |
Manufacturer | |
Manufacturer Product Number | R6076MNZ1C9 |
Description | MOSFET N-CHANNEL 600V 76A TO247 |
Customer Reference | |
Detailed Description | N-Channel 600 V 76A (Tc) 740W (Tc) Through Hole TO-247 |
Datasheet | Datasheet |
EDA/CAD Models | R6076MNZ1C9 Models |
Product Attributes
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Category | Vgs(th) (Max) @ Id 5V @ 1mA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V |
Packaging Tube | Vgs (Max) ±30V |
Part Status Obsolete | Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 25 V |
FET Type | Power Dissipation (Max) 740W (Tc) |
Technology | Operating Temperature -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) 600 V | Mounting Type Through Hole |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-247 |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
Rds On (Max) @ Id, Vgs 55mOhm @ 38A, 10V | Base Product Number |
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Substitutes (8)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| R6070JNZ4C13 | Rohm Semiconductor | 484 | 846-R6070JNZ4C13-ND | 5 847,70000 Ft | Similar |
| RBR3LAM30ATR | Rohm Semiconductor | 1 044 | RBR3LAM30ACT-ND | 205,99000 Ft | Similar |
| IXFH60N65X2 | IXYS | 5 069 | 238-IXFH60N65X2-ND | 4 737,80000 Ft | Similar |
| IXFX80N60P3 | IXYS | 188 | IXFX80N60P3-ND | 7 446,44000 Ft | Similar |
| SIHG47N60E-GE3 | Vishay Siliconix | 0 | SIHG47N60E-GE3-ND | 3 437,29000 Ft | Similar |
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Obsolete
