TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TP65H070G4PS

DigiKey Part Number
1707-TP65H070G4PS-ND
Manufacturer
Renesas Electronics Corporation
Manufacturer Product Number
TP65H070G4PS
Description
GANFET N-CH 650V 29A TO220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Renesas Electronics Corporation
Series
SuperGaN®
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
85mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4.7V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
638 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
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In-Stock: 1 141
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
13 295,51000 Ft3 295,51 Ft
501 826,03980 Ft91 301,99 Ft
1001 684,46360 Ft168 446,36 Ft
5001 508,62500 Ft754 312,50 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3 295,51000 Ft
Unit Price with VAT:4 185,29770 Ft
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