N-Channel 650 V 36A (Tc) 150W (Tc) Through Hole TO-247-3
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TP65H050WSQA

DigiKey Part Number
1707-TP65H050WSQA-ND
Manufacturer
Renesas Electronics Corporation
Manufacturer Product Number
TP65H050WSQA
Description
GANFET N-CH 650V 36A TO247-3
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 36A (Tc) 150W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Renesas Electronics Corporation
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
TP65H050
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In-Stock: 5
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Quantity
All prices are in HUF
Tube
QuantityUnit PriceExt Price
16 530,24000 Ft6 530,24 Ft
304 099,53833 Ft122 986,15 Ft
1203 568,13658 Ft428 176,39 Ft
5103 439,59386 Ft1 754 192,87 Ft
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:6 530,24000 Ft
Unit Price with VAT:8 293,40480 Ft